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| 7MBP50RA120 IGBT-IPM R series Features * Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * Compatible with existing IPM-N series packages * High performance and high reliability IGBT with overheating protection * Higher reliability because of a big decrease in number of parts in built-in control circuit 1200V / 50A 7 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25C unless otherwise specified) Item DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage DB Reverse voltage INV Collector current Symbol VDC VDC(surge) VSC VCES VR IC ICP -IC PC IC ICP IF PC Tj VCC *1 Vin *2 Iin VALM *3 IALM *4 Tstg Top *5 Rating Min. 0 0 200 0 0 0 0 -40 -20 Max. 900 1000 800 1200 1200 50 100 50 357 25 50 25 198 150 20 Vz 1 Vcc 15 125 100 AC2.5 3.5 *6 3.5 *6 Unit V V V V V A A A W A A A W C V V mA V mA C C kV N*m N*m DC 1ms DC One transistor DB Collector power dissipation Collector current DC 1ms Forward current of Diode Collector power dissipation One transistor Junction temperature Input voltage of power supply for Pre-Driver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (Case-Terminal) Viso Screw torque Mounting (M5) Terminal (M5) Fig.1 Measurement of case temperature *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N*m Electrical characteristics of power circuit (at Tc=Tj=25C, Vcc=15V) Item INV Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of Diode Symbol ICES VCE(sat) VF ICES VCE(sat) VF Condition VCE=1200V input terminal open Ic=50A -Ic=50A VCE=1200V input terminal open Ic=25A -Ic=25A Min. - - - - - - - - - - - Typ. Max. 1.0 2.6 3.0 1.0 2.6 3.3 Unit mA V V mA V V DB 7MBP50RA120 Electrical characteristics of control circuit(at Tc=Tj=25C, Vcc=15V) Item Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV DB Over current protection delay time Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm *7 Switching frequency of IPM Symbol Iccp ICCN Vin(th) VZ TCOH TCH TjOH TjH IOC IOC tDOC VUV VH tALM tSC RALM IGBT-IPM Condition Min. Typ. Max. fsw=0 to 15kHz Tc=-20 to 100C *7 3 18 fsw=0 to 15kHz Tc=-20 to 100C *7 10 65 ON 1.00 1.35 1.70 OFF 1.25 1.60 1.95 Rin=20k ohm 8.0 VDC=0V, Ic=0A, Case temperature Fig.1 110 125 20 surface of IGBT chips 150 20 Tj=125C 75 Tj=125C 38 Tj=25C Fig.2 10 11.0 12.5 0.2 1.5 2 Tj=25C Fig.3 12 1425 1500 1575 Unit mA mA V V V C C C C A A s V V ms s ohm Dynamic characteristics(at Tc=Tj=125C, Vcc=15V) Item Switching time (IGBT) Switching time (FWD) Symbol Condition ton toff trr IC=50A, VDC=600V IF=50A, VDC=600V Min. 0.3 Typ. Max. 3.6 0.4 s Unit s s Thermal characteristics(Tc=25C) Item Junction to Case thermal resistance INV DB Case to fin thermal resistance with compound IGBT FWD IGBT Symbol Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Typ. 0.05 Max. 0.35 0.85 0.63 Unit C/W C/W C/W C/W Recommendable value Item DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) Symbol VDC VCC fSW Min. 200 13.5 1 2.5 2.5 Typ. 15 Max. 800 16.5 20 3.0 3.0 Unit V V kHz N*m N*m 7MBP50RA120 Block diagram IGBT-IPM Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Outline drawings, mm Mass : 440g 7MBP50RA120 Characteristics (Representative) Control Circuit Input signal threshold voltage vs. Power supply voltage 2.5 P-side Vcc=17V Vcc=15V IGBT-IPM Power supply current vs. Switching frequency Tj=100C 40 35 30 25 20 15 Vcc=17V 10 5 0 Vcc=15V Vcc=13V Tj=25C Tj=125C Power supply current : Icc (mA) N-side Input signal threshold voltage 2 : Vin(on),Vin(off) (V) } Vin(off) 1.5 } Vin(on) Vcc=13V 1 0.5 0 5 10 15 20 25 0 12 13 14 15 16 17 18 Power supply voltage : Vcc (V) Switching frequency : fsw (kHz) Under voltage vs. Junction temperature 14 12 1 Under voltage hysterisis vs. Jnction temperature Under voltage hysterisis : VH (V) Under voltage : VUVT (V) 0.8 10 8 6 4 2 0 0.6 0.4 0.2 0 20 40 60 80 100 120 140 20 40 60 80 100 120 140 Junction temperature : Tj (C) Junction temperature : Tj (C) Alarm hold time vs. Power supply voltage 3 Over heating characteristics TcOH,TjOH,TcH,TjH vs. Vcc 200 Over heating protection : TcOH,TjOH (C) TjOH OH hysterisis : TcH,TjH (C) 150 TcOH 100 Alarm hold time : tALM (mSec) 2.5 Tj=125C 2 Tj=25C 1.5 1 50 TcH,TjH 0 0.5 0 12 13 14 15 16 17 18 12 13 Power supply voltage : Vcc (V) 14 15 16 17 Power supply voltage : Vcc (V) 18 7MBP50RA120 Inverter IGBT-IPM Collector current vs. Collector-Emitter voltage Tj=25C 80 70 Vcc=17V Vcc=13V 60 50 40 30 20 10 0 Vcc=15V Collector current vs. Collector-Emitter voltage Tj=125C 80 70 Vcc=17V Vcc=13V Vcc=15V Collector Current : Ic (A) Collector Current : Ic (A) 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) Collector-Emitter voltage : Vce (V) Switching time vs. Collector current Edc=600V,Vcc=15V,Tj=25C 10000 10000 Switching time vs. Collector current Edc=600V,Vcc=15V,Tj=125C Switching time : ton,toff,tf (nSec) toff 1000 ton Switching time : ton,toff,tf (nSec) toff ton 1000 tf tf 100 100 10 0 10 20 30 40 50 60 70 80 10 0 10 20 30 40 50 60 70 80 Collector current : Ic (A) Collector current : Ic (A) Forward current vs. Forward voltage 80 70 125C 25C 1000 Reverse recovery characteristics trr,Irr vs. IF Reverse recovery current : Irr(A) Reverse recovery time : trr(nSec) Forward Current : If (A) 60 50 40 30 20 10 0 trr125C trr25C 100 Irr125C Irr25C 10 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 Forward voltage : Vf (V) Forward current : IF(A) 7MBP50RA120 IGBT-IPM Transient thermal resistance 1 Thermal resistance : Rth(j-c) (C/W) FWD 700 600 Reversed biased safe operating area Vcc=15V,Tj 125C IGBT Collector current : Ic (A) 500 400 300 200 100 SCSOA (non-repetitive pulse) 0.1 RBSOA (Repetitive pulse) 0 200 400 600 800 1000 1200 1400 0.01 0.001 0.01 0.1 1 Pulse width :Pw (sec) 0 Collector-Emitter voltage : Vce (V) Power derating for IGBT (per device) 400 150 Power derating for FWD (per device) Collecter Power Dissipation : Pc (W) Collecter Power Dissipation : Pc (W) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 125 100 75 50 25 0 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (C) Case Temperature : Tc (C) Switching Loss vs. Collector Current Edc=600V,Vcc=15V,Tj=25C Switching loss : Eon,Eoff,Err (mJ/cycle) 25 25 Switching Loss vs. Collector Current Edc=600V,Vcc=15V,Tj=125C Switching loss : Eon,Eoff,Err (mJ/cycle) 20 20 Eon 15 Eon 10 Eoff 5 Err 0 0 10 20 30 40 50 60 70 80 15 10 Eoff 5 Err 0 0 10 20 30 40 50 60 70 80 Collector current : Ic (A) Collector current : Ic (A) 7MBP50RA120 IGBT-IPM Over current protection vs. Junction temperature Vcc=15V 200 Over current protection level : Ioc(A) 150 100 50 0 0 20 40 60 80 100 Junction temperature : Tj(C) 120 140 7MBP50RA120 Brake IGBT-IPM C o lle cto r cu rren t vs. C ollec to r-E m itte r vo lta ge T j= 25 C 40 Vcc=17V 35 35 Collector current vs. Collector-Emitter voltage Tj=125C 40 Vcc=17V Vcc=15V Vcc=15V Collector Current : Ic (A) Collector Current : Ic (A) Vcc=13V 30 25 20 15 10 5 0 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 Vcc=13V 0 0.5 1 1.5 2 2.5 3 3 Collector-Emitter voltage : Vce (V) Collector-Emitter voltage : Vce (V) Transient thermal resistance 1 Thermal resistance : Rth(j-c) (C/W) IGBT 300 350 Reversed biased safe operating area Vcc=15V,Tj 125C Collector current : Ic (A) 250 200 150 100 50 RBSOA (Repetitive pulse) 0 SCSOA (non-repetitive pulse) 0.1 0.01 0.001 0.01 0.1 1 0 200 400 600 800 1000 1200 1400 Collector-Emitter voltage : Vce (V) Pulse width :Pw (sec) Power derating for IGBT (per device) 250 Collecter Power Dissipation : Pc (W) Over current protection level : Ioc(A) Over current protection vs. Junction temperature Vcc=15V 100 200 80 150 60 100 40 50 20 0 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (C) 0 0 20 40 60 80 100 120 140 Junction temperature : Tj(C) |
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